General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

Features
• Q1: N-Channel
    7.0A, 30V RDS(on) = 0.028W @ VGS = 10V
              RDS(on) = 0.040W @ VGS = 4.5V
• Q2: P-Channel
    -5A, -30V RDS(on) = 0.052W @ VGS = -10V
              RDS(on) = 0.080W @ VGS = -4.5V
• Fast switching speed
• High power and handling capability in a widely used surface mount package