General Description
This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance.

FEATUREs
• -5 A, -20 V. RDS(on) = 0.045 Ω @ VGS = -4.5 V RDS(on) = 0.070 Ω @ VGS = -2.5 V
• Fast switching speed.
• High density cell design for extremely low RDS(on).
• High power and current handling capability.

APPLICATIONs
• Load switch
• DC/DC converter
• Battery protection