General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
   
Features
• –9 A, –30 V. RDS(ON) = 0.017 Ω @ VGS = -10 V
                       RDS(ON) = 0.025 Ω @ VGS = -4.5 V
• Low gate charge (21nC typical)
• High performance trench technology for extremely
    low RDS(ON)
• High power and current handling capability