datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Shenzhen Jin Yu Semiconductor Co., Ltd.   >>> FDN338P PDF

FDN338P Hoja de datos - Shenzhen Jin Yu Semiconductor Co., Ltd.

FDN338P image

Número de pieza
FDN338P

Other PDF
  no available.

PDF
DOWNLOAD     

page
4 Pages

File Size
1.8 MB

Fabricante
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  

VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-1.6A= 115mΩ
RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155mΩ


FEATUREs
  Advanced trench process technology
  High Density Cell Design For Ultra Low On-Resistance

 

Page Link's: 1  2  3  4 

Número de pieza
componentes Descripción
Ver
Fabricante
20V P-Channel Enhancement-Mode MOSFET
PDF
Shenzhen Huazhimei Semiconductor Co., Ltd
20V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF
ZP Semiconductor
20V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF
Diodes Incorporated.
-20V P-Channel Enhancement Mode MOSFET
PDF
Nanjing International Group Co
20V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF
Diodes Incorporated.
20V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF
Diodes Incorporated.
20V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF
Zetex => Diodes
20V P-Channel Enhancement Mode MOSFET
PDF
Formosa Technology
20V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF
Zetex => Diodes
20V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF
TY Semiconductor

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]