General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

FEATUREs
■ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
■ Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A
■ Advanced Package and Silicon combination for low rDS(on)
   and high efficiency
■ Next generation enhanced body diode technology, engineered
   for soft recovery.
■ MSL1 robust package design
■ 100% UIL tested
■ RoHS Compliant

APPLICATIONs
■ IMVP Vcore Switching for Notebook
■ VRM Vcore Switching for Desktop and Server
■ OringFET / Load Switch
■ DC-DC Conversion