General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

FEATUREs
• –2 A, –12 V. RDS(ON) = 110 mΩ @ VGS = –4.5 V RDS(ON) = 150 mΩ @ VGS = –2.5 V RDS(ON) = 215 mΩ @ VGS = –1.8 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC70-6 surface mount package

APPLICATIONs
• Battery management
• Load switch