General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

FEATUREs
• 30 A, 60 V. RDS(ON) = 0.027 Ω @ VGS = 10 V
                     RDS(ON) = 0.032 Ω @ VGS = 6 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely 
   low RDS(ON).