General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

FEATUREs
• RDS(on) = 2.95mΩ ( Typ.) @ VGS = 10V, ID = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
   RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant

APPLICATION
• DC to DC convertors / Synchronous Rectification