FCI7N60 Hoja de datos - Fairchild Semiconductor
Fabricante

Fairchild Semiconductor
Description
SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
FEATUREs
• 650V @TJ = 150°C
• Typ. RDS(on) = 530 mΩ
• Ultra Low Gate Charge (Typ. Qg = 23 nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 60 pF)
• 100% Avalanche Tested
APPLICATION
• Lighting
• Solar Inverter
• AC-DC Power Supply
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