FB11N50A Hoja de datos - Vishay Semiconductors
Fabricante
Vishay Semiconductors
FEATURES
• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and current
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
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Fabricante
Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
Kersemi Electronic Co., Ltd.
Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
Vishay Semiconductors
SMPS MOSFET(Vdss=500V/ Rds(on)max=0.23ohm/ Id=24A)
International Rectifier
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
International Rectifier
HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
International Rectifier
HEXFET® Power MOSFET VDSS=500V Rds(on) max=0.24Ω ID=20A
International Rectifier
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
International Rectifier
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
International Rectifier
HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A
International Rectifier
