Description
These, the silicon N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.

FEATUREs
● Fast switching
● Low on resistance(Rdson≤0.4Ω)
● Low gate charge(Typ: 50nC)
● Low reverse transfer capacitances(Typ: 25.5pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test

APPLICATIONs
● Used in various power switching circuit for system
   miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger.