EIC1011-12 Hoja de datos - Excelics Semiconductor, Inc.
Número de pieza
EIC1011-12
Fabricante

Excelics Semiconductor, Inc.
FEATURES
• 10.7–11.7GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +40.5 dBm Output Power at 1dB Compression
• 6.0 dB Power Gain at 1dB Compression
• 27% Power Added Efficiency
• -46 dBc IM3 at PO = 28.5 dBm SCL
• 100% Tested for DC, RF, and RTH
Número de pieza
componentes Descripción
Ver
Fabricante
10.7 – 11.7 GHz BAND / 4W X/Ku band internally matched power GaAs FET
MITSUBISHI ELECTRIC
10.7-11.7GHz, 2W Internally Matched Power FET
Excelics Semiconductor, Inc.
12.75-13.25 GHz 12-Watt Internally Matched Power FET
Excelics Semiconductor, Inc.
10.95-12.75 GHz 12-Watt Internally Matched Power FET
Excelics Semiconductor, Inc.
10.0-10.25 GHz 12-Watt Internally Matched Power FET
Excelics Semiconductor, Inc.
9.50-10.50 GHz 12-Watt Internally Matched Power FET
Excelics Semiconductor, Inc.
10.7-11.7GHz, 4W Internally Matched Power FET
Excelics Semiconductor, Inc.
10.7-11.7GHz, 4W Internally Matched Power FET ( Rev : 2003 )
Excelics Semiconductor, Inc.
12.75-13.25 GHz 8-Watt Internally Matched Power FET
Excelics Semiconductor, Inc.
9.50-10.50 GHz 4-Watt Internally-Matched Power FET ( Rev : 2004 )
Excelics Semiconductor, Inc.