
Elpida Memory, Inc
2GB Unbuffered DDR2 SDRAM DIMM
EBE21EE8ABFA (256M words ×72 bits, 2 Ranks)
FEATUREs
• Double-data-rate architecture; two data transfers per clock cycle
• The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
• DQS is edge-aligned with data for READs; center aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Posted /CAS by programmable additive latency for better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-Die Termination for better signal quality
• /DQS can be disabled for single-ended Data Strobe operation