Capitalizing on two-bit-per-cell technology, Intel® StrataFlash™ memory products provide 2X the bits in 1X the space. Offered in 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory devices are the first to bring reliable, two-bit-per-cell storage technology to the flash market.

■ High-Density Symmetrically-Blocked Architecture
    - 64 128-Kbyte Erase Blocks (64 M)
    - 32 128-Kbyte Erase Blocks (32 M)
■ 4.5 V–5.5 V VCC Operation
    - 2.7 V–3.6 V and 4.5 V–5.5 V I/O Capable
■ Configurable x8 or x16 I/O
■ 100 ns Read Access Time (32 M) 150 ns Read Access Time (64 M)
■ Enhanced Data Protection Features
    - Absolute Protection with VPEN = GND
    - Flexible Block Locking
    - Block Erase/Program Lockout during Power Transitions
■ Industry-Standard Packaging
    - µBGA* Package (64 M), SSOP and TSOP Packages (32 M)
■ Cross-Compatible Command Support
    - Intel Basic Command Set
    - Common Flash Interface
    - Scaleable Command Set
■ 32-Byte Write Buffer
    - 6.3 µs per Byte Effective Programming Time
■ 6,400,000 Total Erase Cycles (64 M) 3,200,000 Total Erase Cycles (32 M)
    - 100,000 Erase Cycles per Block
■ Automation Suspend Options
    - Block Erase Suspend to Read
    - Block Erase Suspend to Program
■ System Performance Enhancements
    - STS Status Output
■ Expanded Temperature Operation –20 °C to +70 °C
■ Intel® StrataFlash™ Memory Flash Technology