Número de pieza
D1506
componentes Descripción
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ETC
D1506 Hoja de datos - ETC
ETC
[ROHM]
Low Freq. Power Amp. Epitaxial Planar NPN Silicon Transisor
FEATUREs
1) Low collector saturation voltage: VCE(sat)=0.5V (Typ.) IC/iB=2A/0.2A
2) ASO is wide and resistant to breakdown.
3) Complementary pair with 2SB1065.
4) Easy installation into radiators.
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Fabricante
Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor
ROHM Semiconductor
Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor
ROHM Semiconductor
Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor
ROHM Semiconductor
Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor
ROHM Semiconductor
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
California Eastern Laboratories.
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