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Fabricante
Inchange Semiconductor
DESCRIPTION
· Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
· High DC Current Gain
: hFE= 1000(Min) @IC= 10A
· Low Saturation Voltage
APPLICATIONS
· Designed for high current switching applications.
Número de pieza
componentes Descripción
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Fabricante
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
