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Fabricante

Inchange Semiconductor
DESCRIPTION
• High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V
• Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.)
• Complement to Type 2SB913
APPLICATIONS
• Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications.
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Fabricante
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.