CY7C1328G(2013) Hoja de datos - Cypress Semiconductor
Fabricante

Cypress Semiconductor
Functional Description
The CY7C1328G SRAM integrates 256 K × 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation.
FEATUREs
■ Registered inputs and outputs for pipelined operation
■ Optimal for performance (double-cycle deselect)
❐ Depth expansion without wait state
■ 256 K × 18 common I/O architecture
■ 3.3 V core power supply (VDD)
■ 3.3 V/2.5 V I/O power supply (VDDQ)
■ Fast clock-to-output times
❐ 4.0 ns (for 133-MHz device)
■ Provide high-performance 3-1-1-1 access rate
■ User-selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences
■ Separate processor and controller address strobes
■ Synchronous self-timed writes
■ Asynchronous output enable
■ Available in Pb-free 100-pin TQFP package
■ “ZZ” sleep mode option
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
Número de pieza
componentes Descripción
Ver
Fabricante
4-Mbit (256 K × 18) Flow-Through Sync SRAM ( Rev : 2013 )
Cypress Semiconductor
4-Mbit (256 K × 18) Flow-Through Sync SRAM
Cypress Semiconductor
4-Mbit (256 K × 18) Flow through Sync SRAM ( Rev : 2011 )
Cypress Semiconductor
4-Mbit (256 K × 18) Flow-Through Sync SRAM ( Rev : 2012 )
Cypress Semiconductor
1-Mbit (64K x 18) Pipelined DCD Sync SRAM
Cypress Semiconductor
4-Mbit (256K × 18) Pipelined Sync SRAM ( Rev : 2016 )
Cypress Semiconductor
4-Mb (256K x 18) Pipelined DCD Sync SRAM
Cypress Semiconductor
4-Mbit (128 K × 32) Pipelined Sync SRAM ( Rev : 2013 )
Cypress Semiconductor
4-Mbit (128K x 32) Pipelined DCD Sync SRAM
Cypress Semiconductor
4-Mbit (128K x 36) Pipelined DCD Sync SRAM
Cypress Semiconductor