CY7C1318BV18(2011) Hoja de datos - Cypress Semiconductor
Número de pieza
CY7C1318BV18
Fabricante

Cypress Semiconductor
Features
■ 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)
■ 300 MHz clock for high bandwidth
■ 2-word burst for reducing address bus frequency
■ Double Data Rate (DDR) interfaces
(data transferred at 600 MHz) at 300 MHz
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems
■ Synchronous internally self-timed writes
■ 1.8V core power supply with HSTL inputs and outputs
■ Variable drive HSTL output buffers
■ Expanded HSTL output voltage (1.4V–VDD)
■ Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ JTAG 1149.1 compatible test access port
■ Delay Lock Loop (DLL) for accurate data placement
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