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CQY37N(2008) Hoja de datos - Vishay Semiconductors

CQY37N image

Número de pieza
CQY37N

Other PDF
  1999   2006   lastest PDF  

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page
5 Pages

File Size
284.6 kB

Fabricante
Vishay
Vishay Semiconductors 

DESCRIPTION
CQY37N is an infrared, 950 nm emitting diode in GaAs technology molded in a miniature, clear plastic package with lens.


FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): ∅ 1.8
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector BPW17N
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC


APPLICATIONS
• Radiation source in near infrared range

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Número de pieza
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Fabricante
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Siliconix
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Siliconix
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Siliconix

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