CQY37N(2008) Hoja de datos - Vishay Semiconductors
Fabricante

Vishay Semiconductors
DESCRIPTION
CQY37N is an infrared, 950 nm emitting diode in GaAs technology molded in a miniature, clear plastic package with lens.
FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): ∅ 1.8
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector BPW17N
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Radiation source in near infrared range
Número de pieza
componentes Descripción
Ver
Fabricante
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Siliconix
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Siliconix
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
Vishay Siliconix