CPD41 Hoja de datos - Central Semiconductor
Fabricante
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 19.7 x 19.7 MILS
Die Thickness 8.0 MILS
Anode Bonding Pad Area 6.5 x 6.5 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 12,000Å
Número de pieza
componentes Descripción
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Fabricante
Switching Diode High Current Switching Diode Chip
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DUAL HIGH CURRENT SWITCHING DIODE
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Shanghai Leiditech Electronic Technology Co., Ltd
