Número de pieza
CP645
componentes Descripción
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CP645 Hoja de datos - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process MULTIEPITAXIAL MESA
Die Size 120 x 145 MILS
Die Thickness 13 MILS
Base Bonding Pad Area 20 x 45 MILS
Emitter Bonding Pad Area 14 x 70 MILS
Top Side Metalization Al - 50,000Å
Back Side Metalization Cr / Ni / Ag - 10,000Å
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Power Transistor PNP - Low Saturation Transistor Chip ( Rev : 2006 )
Central Semiconductor
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