Número de pieza
CP635
componentes Descripción
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CP635 Hoja de datos - Central Semiconductor
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PROCESS DETAILS
Process GLASS PASSIVATED MESA
Die Size 106 x 106 MILS
Die Thickness 12 MILS
Base Bonding Pad Area 25 x 33 MILS
Emitter Bonding Pad Area 30 x 36 MILS
Top Side Metalization Al - 50,000Å
Back Side Metalization Ag - 10,000Å
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Power Transistors PNP - Silicon Darlington Transistor Chip ( Rev : 2005 )
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