Número de pieza
CP591V
componentes Descripción
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CP591V Hoja de datos - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 19 x 19 MILS
Die Thickness 7.1 MILS
Base Bonding Pad Area 3.5 x 4.3 MILS
Emitter Bonding Pad Area 3.5 x 4.5 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
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Small Signal Transistors PNP - Amp/Switch Transistor Chip ( Rev : 2006 )
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