Número de pieza
CP589
componentes Descripción
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CP589 Hoja de datos - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
PROCESS EPITAXIAL BASE
DIE SIZE 80 x 80 MILS
DIE THICKNESS 12 MILS
BASE BONDING PAD AREA 12 x 18 MILS
EMITTER BONDING PAD AREA 13 x 28 MILS
TOP SIDE METALIZATION Al - 30,000Å
BACK SIDE METALIZATION Cr/Ni/Ag - Ni-6,000Å; Ag-10,000Å
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Small Signal Transistors PNP - Amp/Switch Transistor Chip ( Rev : 2006 )
Central Semiconductor
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