Número de pieza
CP588
componentes Descripción
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Central Semiconductor
CP588(2002) Hoja de datos - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 15 x 15 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 4.0 x 4.0 MILS
Emitter Bonding Pad Area 5.5 x 5.5 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
Número de pieza
componentes Descripción
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