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CP317V Hoja de datos - Central Semiconductor Corp

CP317V image

Número de pieza
CP317V

componentes Descripción
Small Signal Transistor NPN - RF Transistor Chip

Other PDF
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page
2 Pages

File Size
442.8 kB

Fabricante
CENTRAL
Central Semiconductor Corp 

PROCESS DETAILS
   Process        EPITAXIAL PLANAR
   Die Size          14.5 x 14.5 MILS
   Die Thickness     7.1 MILS
   Base Bonding Pad Area      2.4 x 2.2 MILS
   Emitter Bonding Pad Area      2.4 x 2.2 MILS
   Top Side Metalization      Al - 30,000Å
   Back Side Metalization     Au - 18,000Å


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