CP191(2002) Hoja de datos - Central Semiconductor
Fabricante
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 16.5 x 16.5 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 3.5 x 4.3 MILS
Emitter Bonding Pad Area 3.5 x 4.3 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
Número de pieza
componentes Descripción
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Fabricante
Small Signal Transistor NPN - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor NPN - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor NPN - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor NPN - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor NPN - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistors NPN - Amp Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
