Description
   Cree’s CMP2060035D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

FEATUREs
• 29 dB Small Signal Gain
• 35 W Typical PSAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.144 x 0.162 x 0.004 inches

APPLICATIONs
• Ultra Broadband Drivers
• Fiber Drivers
• Test Instrumentation
• EMC Amplifier Drivers