Description
   Cree’s CMPA0530002S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The CMPA0530002S operates on a 28 volt rail while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 28V to as low as 20V VDD, maintaining high gain and efficiency.

FEATUREs for 28 V in CMPA0530002S-AMP
• 18 dB Small Signal Gain
• 2.9 W Typical PSAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.118 x 0.157 x 0.033 inches

APPLICATIONs
• Civil and Military Communications
• Broadband Amplifiers
• Electronic Warfare
• Industrial Scientific & Medical
• Radar