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CJP08N60 Hoja de datos - ZP Semiconductor

CJP08N60 image

Número de pieza
CJP08N60

componentes Descripción

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page
2 Pages

File Size
399.1 kB

Fabricante
ZPSEMI
ZP Semiconductor 

GENERAL DESCRIPTION
   This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.


FEATURE
• High Current Rating
• Lower RDS(on)
• Lower Capacitance
• Lower Total Gate Charge
• Tighter VSD Specifications
• Avalanche Energy Specified


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componentes Descripción
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