BUZ102S Hoja de datos - Infineon Technologies
Fabricante

Infineon Technologies
Features
•N channel
•Enhancement mode
•Avalanche rated
•dv/dtrated
•175 ˚C operating temperature
Page Link's:
1
2
3
4
5
6
7
8
Número de pieza
componentes Descripción
Ver
Fabricante
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR
International Rectifier
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Siemens AG
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Siemens AG
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRNANSISTOR
International Rectifier
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET® TRANSISTOR
International Rectifier
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
Siemens AG
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
Siemens AG
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
Siemens AG
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
Siemens AG
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
Siemens AG