BUX11A Hoja de datos - GE Solid State
Fabricante
GE Solid State
High-Current, High-Power, High-Speed Silicon N-P-N Power Transistor
FEATUREs:
■ VCEO = 190 V
■ IC = 20 A
■ PT = 200 W
Número de pieza
componentes Descripción
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Fabricante
High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors
GE Solid State
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
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HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ( Rev : 2012 )
Comset Semiconductors
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