BUL770 Hoja de datos - Power Innovations
Fabricante

Power Innovations
● Designed Specifically for High Frequency Electronic Ballasts up to 50 W
● hFE 7 to 21 at VCE = 1 V, IC = 800 mA
● Low Power Losses (On-state and Switching)
● Key Parameters Characterised at High Temperature
● Tight and Reproducible Parametric Distributions
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Fabricante
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor