FEATURES
• Multi-Base design for efficient energy distribution across the chip.
• SIgnificantly improved switching and energy ratings across full temperature range.
• Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
• Triple guard rings for improved control of high voltages.

• CERAMIC SURFACE MOUNT PACKAGE
• FULL MIL/AEROSPACE TEMPERATURE RANGE
• SCREENING OPTIONS FOR MILITARY AND SPACE APPLICATIONS
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE (VCBO = 800V)
• FAST SWITCHING (tf = 100ns)
• HIGH ENERGY RATING