Número de pieza
BUL45D2G
componentes Descripción
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ON Semiconductor
BUL45D2G Hoja de datos - ON Semiconductor
ON Semiconductor
High Speed, High Gain Bipolar NPN Power Transistor
with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network
The BUL45D2G is state−of−art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot−to−lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. It’s characteristics make it also suitable for PFC application.
FEATUREs
• Low Base Drive Requirement
• High Peak DC Current Gain
• Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
• Integrated Collector−Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic VCE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
• These Devices are Pb−Free and are RoHS Compliant*
Número de pieza
componentes Descripción
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Fabricante
High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability ( Rev : 2003 )
ON Semiconductor
High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability
ON Semiconductor
High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability ( Rev : 2011 )
ON Semiconductor
High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability
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