Número de pieza
BUK624R5-30C
componentes Descripción
Other PDF
no available.
PDF
page
14 Pages
File Size
869.6 kB
Fabricante

Nexperia B.V. All rights reserved
General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
FEATUREs and benefits
◾ AEC Q101 compliant
◾ Suitable for standard and logic level
gate drive sources
◾ Suitable for thermally demanding
environments due to 175 °C rating
APPLICATIONs
◾ 12 V Automotive systems
◾ Electric and electro-hydraulic power
steering
◾ Motors, lamps and solenoid control
◾ Start-Stop micro-hybrid applications
◾ Transmission control
◾ Ultra high performance power
switching