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BUK624R5-30C Hoja de datos - Nexperia B.V. All rights reserved

BUK624R5-30C image

Número de pieza
BUK624R5-30C

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page
14 Pages

File Size
869.6 kB

Fabricante
NEXPERIA
Nexperia B.V. All rights reserved 

General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.


FEATUREs and benefits
◾ AEC Q101 compliant
◾ Suitable for standard and logic level
   gate drive sources
◾ Suitable for thermally demanding
   environments due to 175 °C rating


APPLICATIONs
◾ 12 V Automotive systems
◾ Electric and electro-hydraulic power
   steering
◾ Motors, lamps and solenoid control
◾ Start-Stop micro-hybrid applications
◾ Transmission control
◾ Ultra high performance power
   switching


Número de pieza
componentes Descripción
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Fabricante
N-channel TrenchMOS intermediate level FET
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N-channel TrenchMOS intermediate level FET
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N-channel TrenchMOS intermediate level FET
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Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
PDF
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
PDF
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
PDF
Philips Electronics
N-channel TrenchMOS intermediate level FET
PDF
Philips Electronics
N-channel TrenchMOS intermediate level FET
PDF
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
PDF
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
PDF
Nexperia B.V. All rights reserved

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