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BTS707 Hoja de datos - Infineon Technologies

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Número de pieza
BTS707

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page
12 Pages

File Size
296.9 kB

Fabricante
Infineon
Infineon Technologies 

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions.


FEATUREs
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection


APPLICATION
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for inductive loads
• Replaces electromechanical relays, fuses and discrete circuits

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Fabricante
Smart Two Channel Highside Power Switch
PDF
Infineon Technologies
Smart Two Channel Highside Power Switch
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Siemens AG
Smart Two Channel Highside Power Switch
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Infineon Technologies
Smart Two Channel Highside Power Switch
PDF
Siemens AG
Smart Two Channel Highside Power Switch
PDF
Siemens AG
Smart Two Channel Highside Power Switch
PDF
Infineon Technologies
Smart Two Channel Highside Power Switch
PDF
Infineon Technologies
Smart Two Channel Highside Power Switch
PDF
Infineon Technologies
Smart Two Channel Highside Power Switch
PDF
Infineon Technologies
Smart Two Channel Highside Power Switch
PDF
Siemens AG

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