BTC4505A3 Hoja de datos - Cystech Electonics Corp.
Fabricante
Cystech Electonics Corp.
Features
• High breakdown voltage. (BVCEO = 400V)
• Low saturation voltage, typically VCE(sat) = 0.1V at IC / IB=10mA / 1mA.
• Complementary to BTA1759A3
Número de pieza
componentes Descripción
Ver
Fabricante
High Voltage NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
High Voltage NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
High Voltage NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
High Voltage NPN Epitaxial Planar Transistor
Formosa Technology
High Voltage NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
High Voltage NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
High Voltage NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
High Voltage NPN Epitaxial Planar Transistor ( Rev : 2018 )
Cystech Electonics Corp.
High Voltage NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
High Voltage NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
