Número de pieza
BT131-600E
componentes Descripción
Other PDF
no available.
PDF
page
4 Pages
File Size
335.6 kB
Fabricante
Kersemi Electronic Co., Ltd.
HOME >>> Kersemi Electronic Co., Ltd. >>> BT131-600E PDF
BT131-600E Hoja de datos - Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd.
Description
This MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
FEATUREs
1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON)
4) Excellent package for good heat dissipation.
Número de pieza
componentes Descripción
Ver
Fabricante
The G1003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Chanel and N-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Chanel and P-Channel MOSFET use advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Share Link: 