BSZ0502NSI Hoja de datos - Infineon Technologies
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BSZ0502NSI
Fabricante

Infineon Technologies
OptiMOS™5 Power-MOSFET, 30V
FEATUREs
• Optimized for high performance buck converters
• Monolithic integrated Schottky-like diode
• Very low on-resistance RDS(on)@ VGS=4.5V
• 100% avalanche tested
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen free according to IEC61249-2-21
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Fabricante
Metal Oxide Semiconductor Field Effect Transistor
Infineon Technologies
Metal Oxide Semiconductor Field Effect Transistor
Infineon Technologies
Metal Oxide Semiconductor Field Effect Transistor
Infineon Technologies
Metal Oxide Semiconductor Field Effect Transistor
Infineon Technologies
Metal Oxide Semiconductor Field Effect Transistor
Infineon Technologies
Metal Oxide Semiconductor Field Effect Transistor
Infineon Technologies
Metal Oxide Semiconductor Field Effect Transistor ( Rev : 2013 )
Infineon Technologies
Metal Oxide Semiconductor Field Effect Transistor
Infineon Technologies
Metal Oxide Semiconductor Field Effect Transistor
Infineon Technologies
Metal Oxide Semiconductor Field Effect Transistor
Infineon Technologies