DESCRIPTION
The BS616UV2019 is a high performance, ultra low power CMOS Static Random Access Memory organized as 131,072 by 16 bits and operates form a wide range of 1.8V to 3.6V supply voltage.

FEATURES
• Wide VCC low operation voltage :
    C-grade : 1.8V ~ 3.6V
    I-grade : 1.9V ~ 3.6V
• Ultra low power consumption :
    VCC = 2.0V Operation current : 10mA (Max.) at 85ns
                                                       1mA (Max.) at 1MHz
                        Standby current : 0.2uA (Typ.) at 25 °C
    VCC = 3.0V Operation current : 13mA (Max.) at 85ns
                                                       2mA (Max.) at 1MHz
                        Standby current : 0.3uA (Typ.) at 25 °C
• High speed access time :
    -85 85ns (Max.)
    -10 100ns (Max.)
• Automatic power down when chip is deselected
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin.
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V