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BS108 Hoja de datos - General Semiconductor

BS108 image

Número de pieza
BS108

componentes Descripción

Other PDF
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page
5 Pages

File Size
223.7 kB

Fabricante
GE
General Semiconductor 

FEATURES
♦ High breakdown voltage
♦ High input impedance
♦ Low gate threshold voltage
♦ Low drain-source ON resistance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
♦ Specially suited for telephone subsets

 

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