BS108 Hoja de datos - General Semiconductor
Fabricante

General Semiconductor
FEATURES
♦ High breakdown voltage
♦ High input impedance
♦ Low gate threshold voltage
♦ Low drain-source ON resistance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
♦ Specially suited for telephone subsets
Número de pieza
componentes Descripción
Ver
Fabricante
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor
DMOS Transistors (N-Channel)
General Semiconductor