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BLF6G27L-50BN Hoja de datos - NXP Semiconductors.

BLF6G27L-50BN image

Número de pieza
BLF6G27L-50BN

componentes Descripción

Other PDF
  no available.

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page
16 Pages

File Size
179.8 kB

Fabricante
NXP
NXP Semiconductors. 

General description
50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.


FEATUREs and benefits
■ Typical 2-carrier W-CDMA performance at frequencies of 2500 MHz and 2700 MHz, a
   supply voltage of 28 V and an IDq of 430 mA:
   ◆ Average output power = 3 W
   ◆ Power gain = 16.5 dB (typical)
   ◆ Efficiency = 14.5 %
   ◆ ACPR = −47 dBc
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (2500 MHz to 2700 MHz)
■ Internally matched for ease of use
■ Integrated current sense
■ Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC


APPLICATIONs
■ RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to
   2700 MHz frequency range


Número de pieza
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