DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range.
The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.

FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability
• Designed for broadband operation.
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