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BLF178XR Hoja de datos - NXP Semiconductors.

BLF178XR image

Número de pieza
BLF178XR

componentes Descripción

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page
14 Pages

File Size
330.2 kB

Fabricante
NXP
NXP Semiconductors. 

General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.


FEATUREs and benefits
■ Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an
   IDq of 40 mA, a tp of 100 μs with δ of 20 %:
   ◆ Output power = 1400 W
   ◆ Power gain = 28 dB
   ◆ Efficiency = 72 %
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (HF to 128 MHz)
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)


APPLICATIONs
■ Industrial, scientific and medical applications
■ Broadcast transmitter applications


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