BFR91G Hoja de datos - Advanced Power Technology
Fabricante

Advanced Power Technology
DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times.
FEATUREs
• High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA
• Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz
• High Power Gain – Gmax = 16 dB (typ) @ f = 0.5 GHz, 10.9dB (typ) @ 1GHz
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Fabricante
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Power Technology
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
New Jersey Semiconductor
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Unspecified