BFP640(2004) Hoja de datos - Infineon Technologies
Fabricante

Infineon Technologies
NPN Silicon Germanium RF Transistor
• High gain low noise RF transistor
• Provides outstanding performance
for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.65 dB at 1.8 GHz
Outstanding noise figure F = 1.3 dB at 6 GHz
• High maximum stable gain
Gms = 24 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz fT-Silicon Germanium technology
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Fabricante
NPN Silicon Germanium RF Transistor ( Rev : 2004 )
Infineon Technologies
NPN Silicon Germanium RF Transistor
Infineon Technologies
NPN SILICON GERMANIUM RF TRANSISTOR
NEC => Renesas Technology
NPN Silicon Germanium RF Transistor* ( Rev : 2004 )
Infineon Technologies
NPN Silicon Germanium RF Transistor* ( Rev : 2007 )
Infineon Technologies
NPN Silicon Germanium RF Transistor*
Infineon Technologies
NPN Silicon Germanium RF Transistor ( Rev : 2008 )
Infineon Technologies
NPN Silicon Germanium RF Transistor
Infineon Technologies
NPN SILICON GERMANIUM RF TRANSISTOR
Renesas Electronics
NPN SILICON GERMANIUM RF TRANSISTOR
Renesas Electronics