datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Infineon Technologies  >>> BFP460 PDF

BFP460 Hoja de datos - Infineon Technologies

BFP460 image

Número de pieza
BFP460

Other PDF
  2004   2010   2013  

PDF
DOWNLOAD     

page
15 Pages

File Size
457.6 kB

Fabricante
Infineon
Infineon Technologies 

Product description
The BFP460 is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fourth generation RF bipolar transistor family. Its transition frequency fT of 22 GHz, low current and high robustness characteristics make the device suitable for amplifiers. It remains cost competitive without compromising on ease of use.


FEATURE list
• Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 3 V, 5 mA
• High gain Gms = 17.5 dB at 1.8 GHz, 3 V, 20 mA
• OIP3 = 27.5 dBm at 1.8 GHz, 3 V, 20 mA
• High ESD robustness, typical 1.5 kV (HBM)

Potential applications
• Amplifier for remote keyless entry (RKE)
• Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio
• LNAs for sub-1 GHz ISM band applications

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Número de pieza
componentes Descripción
Ver
Fabricante
NPN wideband silicon RF transistor
PDF
NXP Semiconductors.
NPN wideband silicon RF transistor
PDF
NXP Semiconductors.
NPN wideband silicon RF transistor
PDF
NXP Semiconductors.
NPN wideband silicon RF transistor
PDF
NXP Semiconductors.
NPN wideband silicon RF transistor
PDF
NXP Semiconductors.
NPN wideband silicon RF transistor
PDF
NXP Semiconductors.
NPN wideband silicon RF transistor
PDF
NXP Semiconductors.
NPN wideband silicon RF transistor
PDF
NXP Semiconductors.
NPN wideband silicon RF transistor
PDF
NXP Semiconductors.
NPN wideband silicon RF transistor
PDF
NXP Semiconductors.

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]