
Infineon Technologies
Product description
The BFP460 is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fourth generation RF bipolar transistor family. Its transition frequency fT of 22 GHz, low current and high robustness characteristics make the device suitable for amplifiers. It remains cost competitive without compromising on ease of use.
FEATURE list
• Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 3 V, 5 mA
• High gain Gms = 17.5 dB at 1.8 GHz, 3 V, 20 mA
• OIP3 = 27.5 dBm at 1.8 GHz, 3 V, 20 mA
• High ESD robustness, typical 1.5 kV (HBM)
Potential applications
• Amplifier for remote keyless entry (RKE)
• Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio
• LNAs for sub-1 GHz ISM band applications