
NXP Semiconductors.
DESCRIPTION
The BF1203 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected.
Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC.
Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT363 micro-miniature plastic package.
FEATURES
• Two low noise gain controlled amplifiers in a single package
• Superior cross-modulation performance during AGC
• High forward transfer admittance
• High forward transfer admittance to input capacitance ratio.
APPLICATIONS
• Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment.